Publication:

Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain

Date

2021
Journal article
https://doi.org/10.1021/acsami.1c03700
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dc.contributor.authorMellaerts, Simon
dc.contributor.authorAfanas'ev, Valeri
dc.contributor.authorSeo, Jin Won
dc.contributor.authorHoussa, Michel
dc.contributor.authorLocquet, Jean-Pierre
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidextMellaerts, Simon::0000-0002-6715-3066
dc.contributor.orcidextSeo, Jin Won::0000-0003-4937-0769
dc.contributor.orcidextLocquet, Jean-Pierre::0000-0002-4214-7081
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.accessioned2022-09-01T08:45:54Z
dc.date.available2021-11-02T16:00:06Z
dc.date.available2022-09-01T08:45:54Z
dc.date.issued2021
dc.identifier.doi10.1021/acsami.1c03700
dc.identifier.issn1944-8244
dc.identifier.pmidMEDLINE:34157228
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37801
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage30941
dc.source.endpage30949
dc.source.issue26
dc.source.journalACS APPLIED MATERIALS & INTERFACES
dc.source.numberofpages9
dc.source.volume13
dc.subject.keywordsSEMICONDUCTORS
dc.subject.keywordsPRESSURE
dc.subject.keywordsEMISSION
dc.subject.keywordsMOBILITY
dc.subject.keywordsGROWTH
dc.subject.keywordsGE
dc.subject.keywordsSI
dc.title

Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain

dc.typeJournal article
dspace.entity.typePublication
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