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Wafer to Wafer Hybrid Bonding Pitch Scaling Challenges (Invited)

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-4872-0176
cris.virtual.orcid0000-0002-3096-050X
cris.virtual.orcid0000-0002-2526-3873
cris.virtual.orcid0009-0003-5532-9719
cris.virtual.orcid0000-0003-3545-3424
cris.virtual.orcid0000-0001-9978-3575
cris.virtual.orcid0000-0002-7976-0146
cris.virtual.orcid0000-0003-2269-2127
cris.virtual.orcid0000-0002-9332-9336
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-3013-4846
cris.virtual.orcid0000-0002-5195-9241
cris.virtual.orcid0000-0002-0826-9165
cris.virtualsource.department03afbfc5-e4c1-45aa-aa55-02b243defa58
cris.virtualsource.department67066e7b-3582-42ef-b040-694dc2e501ae
cris.virtualsource.departmentbb01fd76-ee52-4074-815c-d27741a82c2a
cris.virtualsource.department719d7d48-18d1-47f6-b284-8c5188c8eb04
cris.virtualsource.department5345513e-14d5-47e9-a494-1dda4ed18864
cris.virtualsource.departmentcc644eaf-5b60-445c-bbcb-6450795a3789
cris.virtualsource.departmentc8611bc6-e23e-4c22-9ed9-54dcffe2e2e1
cris.virtualsource.department79684980-9b72-4519-ac28-bd50dbd7a45e
cris.virtualsource.departmentbf82d6f7-08da-4539-bdf6-c201ad29bfed
cris.virtualsource.department7c159cfd-1a7b-4efc-922e-295a5b391421
cris.virtualsource.departmentbe6b8a3f-f8cb-463e-ab2f-9520f3b1a954
cris.virtualsource.departmentba46bc85-4f40-4d45-9ae9-787baa5405b9
cris.virtualsource.department631cd095-bf2a-4dde-b9c6-cd240a405a24
cris.virtualsource.orcid03afbfc5-e4c1-45aa-aa55-02b243defa58
cris.virtualsource.orcid67066e7b-3582-42ef-b040-694dc2e501ae
cris.virtualsource.orcidbb01fd76-ee52-4074-815c-d27741a82c2a
cris.virtualsource.orcid719d7d48-18d1-47f6-b284-8c5188c8eb04
cris.virtualsource.orcid5345513e-14d5-47e9-a494-1dda4ed18864
cris.virtualsource.orcidcc644eaf-5b60-445c-bbcb-6450795a3789
cris.virtualsource.orcidc8611bc6-e23e-4c22-9ed9-54dcffe2e2e1
cris.virtualsource.orcid79684980-9b72-4519-ac28-bd50dbd7a45e
cris.virtualsource.orcidbf82d6f7-08da-4539-bdf6-c201ad29bfed
cris.virtualsource.orcid7c159cfd-1a7b-4efc-922e-295a5b391421
cris.virtualsource.orcidbe6b8a3f-f8cb-463e-ab2f-9520f3b1a954
cris.virtualsource.orcidba46bc85-4f40-4d45-9ae9-787baa5405b9
cris.virtualsource.orcid631cd095-bf2a-4dde-b9c6-cd240a405a24
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorChew, Soon Aik
dc.contributor.authorZhang, Boyao
dc.contributor.authorKang, Shuo
dc.contributor.authorBogaerts, Lieve
dc.contributor.authorDe Messemaeker, Joke
dc.contributor.authorChery, Emmanuel
dc.contributor.authorIacovo, Serena
dc.contributor.authorD'havé, Koen
dc.contributor.authorDewilde, Sven
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorBeyne, Eric
dc.contributor.authorTokei, Zsolt
dc.date.accessioned2026-09-14T13:02:27Z
dc.date.available2026-09-14T13:02:27Z
dc.date.createdwos2026
dc.date.issued2026
dc.description.abstractThe past years technology aspects of wafer-to-wafer hybrid bonding pitch scaling down to 200nm was documented extensively. This paper discusses specific yield improvement challenges and solutions related to sub-micron scaling, such as wafer-to-wafer bond alignment accuracy, global and local wafer topography control by CMP ensuring void free hybrid bonding, electro-chemical copper corrosion of hybrid pads connected to long metal lines, surface-diffusion-driven copper bulge-out mechanisms, dielectric breakdown and copper diffusion along the bonding interface.
dc.identifier.doi10.1109/irps61424.2026.11499286
dc.identifier.isbn979-8-3315-8972-1
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/60357
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.relation.ispartofseriesInternational Reliability Physics Symposium
dc.source.beginpage1
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedate2026-03-22
dc.source.conferencelocationTucson
dc.source.endpage9
dc.source.journal2026 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
dc.source.numberofpages9
dc.title

Wafer to Wafer Hybrid Bonding Pitch Scaling Challenges (Invited)

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-05-08
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-09-11
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