Publication:
Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistors
| dc.contributor.author | Chen, Kuan-Chu | |
| dc.contributor.author | Godfrin, Clement | |
| dc.contributor.author | Simion, George | |
| dc.contributor.author | Fattal, Imri | |
| dc.contributor.author | Jussot, Julien | |
| dc.contributor.author | Kubicek, Stefan | |
| dc.contributor.author | Beyne, Sofie | |
| dc.contributor.author | Raes, Bart | |
| dc.contributor.author | Loenders, Arne | |
| dc.contributor.author | Kao, Kuo-Hsing | |
| dc.contributor.author | Wan, Danny | |
| dc.contributor.author | De Greve, Kristiaan | |
| dc.contributor.imecauthor | Chen, Kuan-Chu | |
| dc.contributor.imecauthor | Godfrin, Clement | |
| dc.contributor.imecauthor | Simion, George | |
| dc.contributor.imecauthor | Fattal, Imri | |
| dc.contributor.imecauthor | Jussot, Julien | |
| dc.contributor.imecauthor | Kubicek, Stefan | |
| dc.contributor.imecauthor | Beyne, Sofie | |
| dc.contributor.imecauthor | Raes, Bart | |
| dc.contributor.imecauthor | Loenders, Arne | |
| dc.contributor.imecauthor | Wan, Danny | |
| dc.contributor.imecauthor | De Greve, Kristiaan | |
| dc.contributor.orcidimec | Godfrin, Clement::0000-0002-5244-3474 | |
| dc.contributor.orcidimec | Simion, George::0000-0002-6880-6161 | |
| dc.contributor.orcidimec | Fattal, Imri::0009-0000-5190-9685 | |
| dc.contributor.orcidimec | Jussot, Julien::0000-0002-2484-3462 | |
| dc.contributor.orcidimec | Kubicek, Stefan::0009-0006-2163-5760 | |
| dc.contributor.orcidimec | Beyne, Sofie::0000-0002-5138-0280 | |
| dc.contributor.orcidimec | Raes, Bart::0000-0003-0928-0654 | |
| dc.contributor.orcidimec | Loenders, Arne::0009-0009-1596-026X | |
| dc.contributor.orcidimec | Wan, Danny::0000-0003-4847-3184 | |
| dc.contributor.orcidimec | De Greve, Kristiaan::0000-0002-1314-9715 | |
| dc.date.accessioned | 2025-04-15T04:20:29Z | |
| dc.date.available | 2025-04-15T04:20:29Z | |
| dc.date.issued | 2025-MAR 5 | |
| dc.description.wosFundingText | This work was supported in part by European Union's Horizon 2020 Research and Innovation Program under GrantAgreement No. 951852 (QLSI) , and in part by the National Science and Technology Council (NSTC) , Taiwan under Con-tract No. 113-2917-I-564-007. This work was performed as part of IMEC's Industrial Affiliation Program (IIAP) on Quantum Computing.r Agreement No. 951852 (QLSI) , and in part by the National Science and Technology Council (NSTC) , Taiwan under Con-tract No. 113-2917-I-564-007. This work was performed as part of IMEC's Industrial Affiliation Program (IIAP) on Quantum Computing. | |
| dc.identifier.doi | 10.1103/PhysRevB.111.125301 | |
| dc.identifier.issn | 2469-9950 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45536 | |
| dc.publisher | AMER PHYSICAL SOC | |
| dc.source.issue | 12 | |
| dc.source.journal | PHYSICAL REVIEW B | |
| dc.source.numberofpages | 9 | |
| dc.source.volume | 111 | |
| dc.subject.keywords | THERMAL-EXPANSION COEFFICIENT | |
| dc.subject.keywords | QUANTUM | |
| dc.subject.keywords | QUBITS | |
| dc.title | Statistical analysis of spurious dot formation in silicon metal-oxide-semiconductor single electron transistors | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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