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Defects in As-grown silicon and their evolution during heat treatments

Date

1997
Proceedings Paper
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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorDornberger, E.
dc.contributor.authorEsfandyari, J.
dc.contributor.authorKissinger, G.
dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorBender, Hugo
dc.contributor.authorGräf, D.
dc.contributor.authorLambert, U.
dc.contributor.authorvon Ammon, W.
dc.contributor.imecauthorBender, Hugo
dc.date.accessioned2021-09-30T09:58:19Z
dc.date.available2021-09-30T09:58:19Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2270
dc.source.beginpage341
dc.source.conferenceDefects in Semiconductors 19 - ICDS 19
dc.source.conferencedate21/07/1997
dc.source.conferencelocationAveiro Portugal
dc.source.endpage6
dc.title

Defects in As-grown silicon and their evolution during heat treatments

dc.typeProceedings paper
dspace.entity.typePublication
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