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Effect of grown-in defects on the structure of oxygen precipitates in Cz-Si crystals with different diameter

Date

2008
Proceedings Paper
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dc.contributor.authorLitovchenko, V.G.
dc.contributor.authorLisovskyy, I.P.
dc.contributor.authorClaeys, Cor
dc.contributor.authorKladko, V.P.
dc.contributor.authorZlobin, S.O.
dc.contributor.authorMuravska, M.V.
dc.contributor.authorEfremov, O.O.
dc.contributor.authorSlobodjan, M.V.
dc.date.accessioned2021-10-17T08:26:22Z
dc.date.available2021-10-17T08:26:22Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14046
dc.source.beginpage405
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology XII
dc.source.conferencedate14/10/2007
dc.source.conferencelocationErice Italy
dc.source.endpage412
dc.title

Effect of grown-in defects on the structure of oxygen precipitates in Cz-Si crystals with different diameter

dc.typeProceedings paper
dspace.entity.typePublication
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