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2D MoS2 film thickness impact on the efficiency of surface-doped devices

Date

2017
Meeting abstract
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dc.contributor.authorLockhart de la Rosa, Cesar Javier
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorLeonhardt, Alessandra
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorRadu, Iuliana
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorLockhart de la Rosa, Cesar Javier
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorLeonhardt, Alessandra
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-24T08:09:34Z
dc.date.available2021-10-24T08:09:34Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28845
dc.identifier.urlhttp://www.ieeesisc.org/programs/2017_SISC_technical_program.pdf
dc.source.beginpage2.5
dc.source.conference48th IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate6/12/2017
dc.source.conferencelocationSan Diego, CA USA
dc.title

2D MoS2 film thickness impact on the efficiency of surface-doped devices

dc.typeMeeting abstract
dspace.entity.typePublication
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