Publication:

650 V p-GaN gate power HEMTs on 200 mm engineered substrates

Date

2019
Proceedings Paper
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dc.contributor.authorGeens, Karen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorZhao, Ming
dc.contributor.authorGuo, Weiming
dc.contributor.authorWellekens, Dirk
dc.contributor.authorPosthuma, Niels
dc.contributor.authorFahle, Dirk
dc.contributor.authorAktas, Ozgur
dc.contributor.authorOdnoblyudov, Vlad
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-27T09:34:00Z
dc.date.available2021-10-27T09:34:00Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33020
dc.source.beginpage292
dc.source.conference7th Workshop on Wide Bandgap Power Devices and Applications - WIPDA 2019
dc.source.conferencedate29/10/2019
dc.source.conferencelocationRaleigh, NC United States
dc.source.endpage296
dc.title

650 V p-GaN gate power HEMTs on 200 mm engineered substrates

dc.typeProceedings paper
dspace.entity.typePublication
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