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Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20MeV protons
Publication:
Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20MeV protons
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Date
2003
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Takakura, K.
;
Ohyama, H.
;
Ueda, A.
;
Nakabayashi, M.
;
Hayama, K.
;
Kobayashi, K.
;
Simoen, Eddy
;
Mercha, Abdelkarim
;
Claeys, Cor
Journal
Semiconductor Science and Technology
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1897
since deposited on 2021-10-15
Acq. date: 2025-12-15
Citations
Metrics
Views
1897
since deposited on 2021-10-15
Acq. date: 2025-12-15
Citations