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Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors

 
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dc.contributor.authorMukherjee, Shankha
dc.contributor.authorBizindavyi, Jasper
dc.contributor.authorLuo, Y. -C
dc.contributor.authorClima, Sergiu
dc.contributor.authorRead, J.
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorXiang, Yang
dc.contributor.authorBazzazian, Nina
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorDelhougne, Romain
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorCatthoor, Francky
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorYu, S.
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2026-04-27T14:24:50Z
dc.date.available2026-04-27T14:24:50Z
dc.date.createdwos2026-03-24
dc.date.issued2023
dc.description.abstractAchieving an energy-efficient, non-volatile memory window (MW) with non-destructive read operation (NDRO) remains a challenge for random access memory, compute-in-memory, and machine learning frameworks. In this work, we report on achieving a record high ferroelectric (FE) capacitive MW (CMW) of ~8.7 at 0 V by introducing an interfacial asymmetry between the electrodes of a fully BEOL compatible HZO-based metal-FE-metal (MFM) FE capacitor (FeCAP). We demonstrate that the CMW can also be read non-destructively using pulses, instead of C-V measurements, which are more reflective of practical charge-based read-circuit implementations. Furthermore, for the first time, we experimentally show that the NDRO leads to a full decoupling of the read- and write-endurance, thereby allowing for a non-destructive read-endurance beyond 1011 cycles even though the write-endurance is limited to ~107 cycles. Moreover, we investigate read voltage optimization to achieve higher CMW while maintaining NDRO and bench-mark the device performance towards system realization.
dc.description.wosFundingTextThis work is supported by IMEC's industry affiliated program.
dc.identifier.doi10.1109/iedm45741.2023.10413879
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59222
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conferenceInternational Electron Devices Meeting (IEDM)
dc.source.conferencedate2023-12-09
dc.source.conferencelocationSan Francisco
dc.source.journal2023 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
dc.source.numberofpages4
dc.title

Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-04-07
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
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