Publication:
A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages
Date
| dc.contributor.author | Kottantharayil, Anil | |
| dc.contributor.author | Mahapatra, S. | |
| dc.contributor.author | Eisele, I. | |
| dc.date.accessioned | 2021-10-15T05:13:36Z | |
| dc.date.available | 2021-10-15T05:13:36Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7753 | |
| dc.source.beginpage | 995 | |
| dc.source.endpage | 1001 | |
| dc.source.issue | 6 | |
| dc.source.journal | Solid-State Electronics | |
| dc.source.volume | 47 | |
| dc.title | A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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