Publication:

Engineering of a TiN\Al2O3\(Hf,Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

Date

2015
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-22T18:40:19Z
dc.date.available2021-10-22T18:40:19Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25065
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7324764
dc.source.beginpage262
dc.source.conference45th European Solid State Devices and Research Conference - ESSDERC
dc.source.conferencedate14/09/2015
dc.source.conferencelocationGraz Austria
dc.source.endpage265
dc.title

Engineering of a TiN\Al2O3(Hf,Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions