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(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices
Publication:
(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices
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Date
2004
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Loo, Roger
;
Delhougne, Romain
;
Meunier-Beillard, Philippe
;
Caymax, Matty
;
Verheyen, Peter
;
Eneman, Geert
;
De Wolf, Ingrid
;
Janssens, Tom
;
Benedetti, Alessandro
;
De Meyer, Kristin
;
Vandervorst, Wilfried
;
Heyns, Marc
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Metrics
Views
1877
since deposited on 2021-10-15
2
last month
1
last week
Acq. date: 2025-12-10
Citations