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Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Publication:
Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
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Date
2004
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lukyanchikova, N.
;
Garbar, N.
;
Smolanka, A.
;
Simoen, Eddy
;
Claeys, Cor
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1973
since deposited on 2021-10-15
3
last month
Acq. date: 2025-12-11
Citations
Metrics
Views
1973
since deposited on 2021-10-15
3
last month
Acq. date: 2025-12-11
Citations