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Capacitance-voltage and conductance analysis of high-k/InxGa1-xAs structures (x = 0, 0.15, 0.3, and 0.53)

Date

2009
Meeting abstract
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dc.contributor.authorHurley, P.K.
dc.contributor.authorO'Connor, E.
dc.contributor.authorMonaghan, S.
dc.contributor.authorLong, R.D.
dc.contributor.authorO'Mahony, A.
dc.contributor.authorPovey, I.M.
dc.contributor.authorCherkaoui, K.
dc.contributor.authorPemble, M.E.
dc.contributor.authorMacHale, J.
dc.contributor.authorQuinn, A.J.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorHeyns, Marc
dc.contributor.authorNewcomb, S.B.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.date.accessioned2021-10-17T23:03:23Z
dc.date.available2021-10-17T23:03:23Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15510
dc.source.beginpage2115
dc.source.conference216th ECS Meeting
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
dc.title

Capacitance-voltage and conductance analysis of high-k/InxGa1-xAs structures (x = 0, 0.15, 0.3, and 0.53)

dc.typeMeeting abstract
dspace.entity.typePublication
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