Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

dc.contributor.author	Hu, Jie
dc.contributor.author	Stoffels, Steve
dc.contributor.author	Lenci, Silvia
dc.contributor.author	You, Shuzhen
dc.contributor.author	Bakeroot, Benoit
dc.contributor.author	Ronchi, Nicolo
dc.contributor.author	Groeseneken, Guido
dc.contributor.author	Decoutere, Stefaan
dc.contributor.imecauthor	Stoffels, Steve
dc.contributor.imecauthor	Lenci, Silvia
dc.contributor.imecauthor	You, Shuzhen
dc.contributor.imecauthor	Bakeroot, Benoit
dc.contributor.imecauthor	Ronchi, Nicolo
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidimec	Bakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimec	Ronchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimec	Groeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2021-10-23T11:23:28Z
dc.date.available	2021-10-23T11:23:28Z
dc.date.issued	2016
dc.identifier.issn	1862-6300
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/26750
dc.identifier.url	10.1002/pssa.201532797
dc.source.beginpage	1229
dc.source.endpage	1235
dc.source.issue	5
dc.source.journal	Physica Status Solidi A
dc.source.volume	213
dc.title	Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
dc.type	Journal article
dspace.entity.type	Publication
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