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Growth and characterization of mid-infrared InAsSb/InAs strained multiple quantum well light-emitting diodes grown on InAs substrates

Date

1996
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dc.contributor.authorGrietens, Bob
dc.contributor.authorNemeth, Stefan
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-09-29T14:31:09Z
dc.date.available2021-09-29T14:31:09Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1238
dc.source.conferenceMid-infrared Optoelectronics, Materials and Devices; September 17-18, 1996; Lancaster, U.K.
dc.source.conferencelocation
dc.title

Growth and characterization of mid-infrared InAsSb/InAs strained multiple quantum well light-emitting diodes grown on InAs substrates

dc.typeOral presentation
dspace.entity.typePublication
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