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Tunable n- and p-type doping of single-layer graphene by engineering its interaction with the SiO2 support

Date

2012
Journal article
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dc.contributor.authorNourbakhsh, Amirhasan
dc.contributor.authorCantoro, Mirco
dc.contributor.authorLi, Bing
dc.contributor.authorMuller, Robert
dc.contributor.authorDe Feyter, Steven
dc.contributor.authorHeyns, Marc
dc.contributor.authorSels, Bert
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-20T13:57:57Z
dc.date.available2021-10-20T13:57:57Z
dc.date.issued2012
dc.identifier.issn1862-6254
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21212
dc.source.beginpage53
dc.source.endpage55
dc.source.issue2
dc.source.journalPhysica Status Solidi. Rapid Research Letters
dc.source.volume6
dc.title

Tunable n- and p-type doping of single-layer graphene by engineering its interaction with the SiO2 support

dc.typeJournal article
dspace.entity.typePublication
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