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Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Date

2013
Meeting abstract
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dc.contributor.authorHu, Jie
dc.contributor.authorLenci, Silvia
dc.contributor.authorStoffels, Steve
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-21T08:22:03Z
dc.date.available2021-10-21T08:22:03Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22507
dc.source.conference10th International Conference on Nitride Semiconductors
dc.source.conferencedate25/08/2013
dc.source.conferencelocationWashington, DC USA
dc.title

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

dc.typeMeeting abstract
dspace.entity.typePublication
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