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Top-pinned STT-MRAM devices with high thermal stability hybrid free layers for high density memory applications

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dc.contributor.authorLiu, Enlong
dc.contributor.authorSwerts, Johan
dc.contributor.authorWu, Jackson
dc.contributor.authorVaysset, Adrien
dc.contributor.authorCouet, Sebastien
dc.contributor.authorMertens, Sofie
dc.contributor.authorRao, Siddharth
dc.contributor.authorKim, Woojin
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorWu, Jackson
dc.contributor.imecauthorCouet, Sebastien
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorRao, Siddharth
dc.contributor.imecauthorKim, Woojin
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecCouet, Sebastien::0000-0001-6436-9593
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecRao, Siddharth::0000-0001-6161-3052
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-25T22:14:31Z
dc.date.available2021-10-25T22:14:31Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31204
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8508078
dc.source.beginpage1800HC02
dc.source.conferenceIEEE International Magnetic Conference - Intermag
dc.source.conferencedate23/04/2018
dc.source.conferencelocationSingapore Singapore
dc.title

Top-pinned STT-MRAM devices with high thermal stability hybrid free layers for high density memory applications

dc.typeProceedings paper
dspace.entity.typePublication
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