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Fabrication and characterization of Si and hetero-junction tunnel field effect transistors

Date

2009
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dc.contributor.authorClaeys, Cor
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecLeonelli, Daniele::0000-0003-1596-7284
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-17T21:37:10Z
dc.date.available2021-10-17T21:37:10Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15109
dc.source.conferenceGlobal COE International Symposium Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
dc.source.conferencedate13/10/2009
dc.source.conferencelocationTokyo Japan
dc.title

Fabrication and characterization of Si and hetero-junction tunnel field effect transistors

dc.typeOral presentation
dspace.entity.typePublication
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