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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Publication:
0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Date
2008
Proceedings Paper
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16649.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Menou, Nicolas
;
Wang, Xin Peng
;
Kaczer, Ben
;
Polspoel, Wouter
;
Popovici, Mihaela Ioana
;
Opsomer, Karl
;
Pawlak, Malgorzata
;
Knaepen, W.
;
Detavernier, C.
;
Blomberg, T.
;
Pierreux, D.
;
Swerts, Johan
;
Maes, Jan
;
Favia, Paola
;
Bender, Hugo
;
Brijs, Bert
;
Vandervorst, Wilfried
;
Van Elshocht, Sven
;
Wouters, Dirk
;
Biesemans, Serge
;
Kittl, Jorge
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Abstract
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2344
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations
Metrics
Views
2344
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations