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Manufacturing challenges of GaN-on-Si HEMTs in a 200 mm CMOS fab

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dc.contributor.authorMarcon, Denis
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorHalder, Sandip
dc.contributor.authorVranckx, Nick
dc.contributor.authorMannaert, Geert
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorHalder, Sandip
dc.contributor.imecauthorVranckx, Nick
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecHalder, Sandip::0000-0002-6314-2685
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-20T13:11:08Z
dc.date.available2021-10-20T13:11:08Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21093
dc.source.conferenceInternational Smposium on Semiconductor Manufacturing - ISSM
dc.source.conferencedate15/10/2012
dc.source.conferencelocationTokio Japan
dc.title

Manufacturing challenges of GaN-on-Si HEMTs in a 200 mm CMOS fab

dc.typeProceedings paper
dspace.entity.typePublication
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