Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

dc.contributor.author	Delabie, Annelies
dc.contributor.author	Sioncke, Sonja
dc.contributor.author	Rip, Jens
dc.contributor.author	Van Elshocht, Sven
dc.contributor.author	Pourtois, Geoffrey
dc.contributor.author	Mueller, Matthias
dc.contributor.author	Beckhoff, Burkhard
dc.contributor.author	Pierloot, Kristine
dc.contributor.imecauthor	Delabie, Annelies
dc.contributor.imecauthor	Rip, Jens
dc.contributor.imecauthor	Van Elshocht, Sven
dc.contributor.imecauthor	Pourtois, Geoffrey
dc.contributor.orcidimec	Van Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimec	Pourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned	2021-10-20T10:38:37Z
dc.date.available	2021-10-20T10:38:37Z
dc.date.issued	2012
dc.identifier.issn	0734-2101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/20582
dc.source.beginpage	01A127
dc.source.issue	1
dc.source.journal	Journal of Vacuum Science and Technology A
dc.source.volume	30
dc.title	Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates
dc.type	Journal article
dspace.entity.type	Publication
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