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Conference contributions
GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS
Publication:
GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS
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Date
2013
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Silvestri, Marco
;
Michael, Uren
;
Marcon, Denis
;
Kuball, Martin
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Abstract
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1896
since deposited on 2021-10-21
Acq. date: 2025-12-10
Citations
Metrics
Views
1896
since deposited on 2021-10-21
Acq. date: 2025-12-10
Citations