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Molecular beam epitaxy and characterization of InAs/(Al, Ga)Sb quantum wells for device application

Date

1997
Meeting abstract
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dc.contributor.authorBehet, Markus
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-09-30T07:56:06Z
dc.date.available2021-09-30T07:56:06Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1725
dc.source.beginpageD1.15c
dc.source.conferencePHASDOM 97 : Phantoms Strategic Domain meetings, Physics and Technology of Mesoscopic Systems. Abstracts
dc.source.conferencedate10/03/1997
dc.source.conferencelocationAachen Germany
dc.title

Molecular beam epitaxy and characterization of InAs/(Al, Ga)Sb quantum wells for device application

dc.typeMeeting abstract
dspace.entity.typePublication
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