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Correlation of transport and structural properties in AlGaN/GaN HEMT: Strain modification by means of AlN interlayers
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Correlation of transport and structural properties in AlGaN/GaN HEMT: Strain modification by means of AlN interlayers
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Date
2003
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Germain, Marianne
;
Leys, Maarten
;
Boeykens, Steven
;
Ruythooren, Wouter
;
Schreurs, Dominique
;
Choi, Kang-Hoon
;
Borghs, Gustaaf
;
Van Daele, Benny
;
Van Tendeloo, Gustaaf
;
Farvacque, Jean-Louis
;
Carosella, Francesca
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Views
2044
since deposited on 2021-10-15
1
last month
1
last week
Acq. date: 2026-08-07
Citations