Publication:

New CoSi2 SALICIDE technology for 0.1 µm processes and below

Date

1995
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorWang, Qingfeng
dc.contributor.authorMaex, Karen
dc.contributor.authorKubicek, Stefan
dc.contributor.authorJonckheere, Rik
dc.contributor.authorKerkwijk, Bas
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.date.accessioned2021-09-29T13:25:17Z
dc.date.available2021-09-29T13:25:17Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1007
dc.source.beginpage17
dc.source.conference1995 Symposium on VLSI Technology. Digest of Technical Papers; 6-8 June 1995; Kyoto, Japan.
dc.source.conferencelocation
dc.source.endpage18
dc.title

New CoSi2 SALICIDE technology for 0.1 µm processes and below

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions