Publication:

Improving post-cycling low resistance state retention in resistive RAM with combined oxygen vacancy and copper filament

Date

2019
Journal article
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dc.contributor.authorRadhakrishnan, Janaki
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorClima, Sergiu
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorHoussa, Michel
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorGoux, Ludovic
dc.contributor.imecauthorRadhakrishnan, Janaki
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-27T16:35:20Z
dc.date.available2021-10-27T16:35:20Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33846
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8717729
dc.source.beginpage1072
dc.source.endpage1075
dc.source.issue7
dc.source.journalIEEE Electron Device Letters
dc.source.volume40
dc.title

Improving post-cycling low resistance state retention in resistive RAM with combined oxygen vacancy and copper filament

dc.typeJournal article
dspace.entity.typePublication
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