Publication:

Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices

Date

2014
Proceedings Paper
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dc.contributor.authorBury, Erik
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKaczer, Ben
dc.contributor.authorGoes, Wolfgang
dc.contributor.authorGrasser, Tibor
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-22T00:50:54Z
dc.date.available2021-10-22T00:50:54Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23595
dc.source.beginpagena
dc.source.conferenceInternational Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate30/06/2014
dc.source.conferencelocationSingapore Singapore
dc.title

Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG devices

dc.typeProceedings paper
dspace.entity.typePublication
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