Publication:

Variability of band alignment between WS2 and SiO2: Intrinsic versus extrinsic contributions

Date

2022
Journal article
https://doi.org/10.1116/6.0001987
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dc.contributor.authorDelie, Gilles
dc.contributor.authorLitwin, Peter M. M.
dc.contributor.authorAbad, Gaby C. C.
dc.contributor.authorMcDonnell, Stephen J. J.
dc.contributor.authorChiappe, Daniele
dc.contributor.authorAfanasiev, Valeri V. V.
dc.contributor.imecauthorChiappe, Daniele
dc.date.accessioned2022-11-17T15:19:57Z
dc.date.available2022-10-17T02:51:32Z
dc.date.available2022-11-17T15:19:57Z
dc.date.embargo2023-09-30
dc.date.issued2022
dc.description.wosFundingTextACKNOWLEDGMENTSThis work was financially supported by the KU Leuven Internal Fund (Project No. C14/16/061) and NSF-IUCRC.
dc.identifier.doi10.1116/6.0001987
dc.identifier.issn0734-2101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40586
dc.publisherA V S AMER INST PHYSICS
dc.source.beginpage062201
dc.source.endpagena
dc.source.issue6
dc.source.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
dc.source.numberofpages6
dc.source.volume40
dc.subject.keywordsMOS2 TRANSISTORS
dc.subject.keywordsMONOLAYER MOS2
dc.subject.keywordsMOBILITY
dc.title

Variability of band alignment between WS2 and SiO2: Intrinsic versus extrinsic contributions

dc.typeJournal article
dspace.entity.typePublication
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