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Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon

Date

2002
Proceedings Paper
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dc.contributor.authorRafi, Joan Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorUlyashin, A.G.
dc.contributor.authorJob, R.
dc.contributor.authorFahrner, W.R.
dc.contributor.authorVersluys, J.
dc.contributor.authorClauws, P.
dc.contributor.authorLozano, M.
dc.contributor.authorMartinez, C.
dc.contributor.authorCampabadal, F.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T22:53:52Z
dc.date.available2021-10-14T22:53:52Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6750
dc.source.beginpage91
dc.source.conferenceProceedings of the 5th Annual Workshop on Semiconductor Advances for Future Electronics - SAFE
dc.source.conferencedate26/11/2002
dc.source.conferencelocationVeldhoven The Netherlands
dc.source.endpage98
dc.title

Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon

dc.typeProceedings paper
dspace.entity.typePublication
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