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Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells

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dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorClima, Sergiu
dc.contributor.authorDegraeve, Robin
dc.contributor.authorChen, Yangyin
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.date.accessioned2021-10-22T00:55:10Z
dc.date.available2021-10-22T00:55:10Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23630
dc.source.beginpage355
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2014
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage358
dc.title

Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells

dc.typeProceedings paper
dspace.entity.typePublication
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