Publication:
Germanium deep-submicron pFET and nFET devices with etched TaN metal gate and high-k dielectric, fabricated on germanium-on-insulator substrates
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1937 since deposited on 2021-10-16
Acq. date: 2026-01-09
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Views
1937 since deposited on 2021-10-16
Acq. date: 2026-01-09
Citations