Publication:

Selective epitaxial growth (SEG) of p-GaN gate layer for enhancement mode GaN/AlGaN HEMT

Date

2016
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorLiang, Hu
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T12:13:25Z
dc.date.available2021-10-23T12:13:25Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26909
dc.source.beginpageTu-P.011
dc.source.conference33rd International Conference on the Physics of Semiconductors - ICPS
dc.source.conferencedate31/07/2016
dc.source.conferencelocationBeijing China
dc.title

Selective epitaxial growth (SEG) of p-GaN gate layer for enhancement mode GaN/AlGaN HEMT

dc.typeMeeting abstract
dspace.entity.typePublication
Files

Original bundle

Name:
34173.pdf
Size:
1.49 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions