Publication:

Impact of etch stop layer on negative bias illumination stress of amorphous indium gallium zinc oxide transistors

Date

2014
Proceedings Paper
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dc.contributor.authorBhoolokam, Ajay
dc.contributor.authorNag, Manoj
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSteudel, Soeren
dc.contributor.authorGenoe, Jan
dc.contributor.authorGelinck, Gerwin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeremans, Paul
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.accessioned2021-10-22T00:46:47Z
dc.date.available2021-10-22T00:46:47Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23550
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948820
dc.source.beginpage302
dc.source.conference44th European Solid-State Device Conference - ESSDERC
dc.source.conferencedate22/09/2014
dc.source.conferencelocationVenice Italy
dc.source.endpage304
dc.title

Impact of etch stop layer on negative bias illumination stress of amorphous indium gallium zinc oxide transistors

dc.typeProceedings paper
dspace.entity.typePublication
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