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Focused ion beam preparation for cross-sectional transmission electron microscopy investigation of the top surface of unpassivated or partially processed ULSI devices

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dc.contributor.authorBender, Hugo
dc.contributor.authorVan Marcke, Pieter
dc.contributor.authorDrijbooms, Chris
dc.contributor.authorRoussel, Philippe
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDrijbooms, Chris
dc.contributor.imecauthorRoussel, Philippe
dc.date.accessioned2021-09-30T11:27:42Z
dc.date.available2021-09-30T11:27:42Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2390
dc.source.beginpage863
dc.source.conferenceCharacterization and Metrology for ULSI Technology: 1998 International Conference
dc.source.conferencedate23/03/1998
dc.source.conferencelocationGaithersburg, VA USA
dc.source.endpage867
dc.title

Focused ion beam preparation for cross-sectional transmission electron microscopy investigation of the top surface of unpassivated or partially processed ULSI devices

dc.typeProceedings paper
dspace.entity.typePublication
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