Publication:

Low frequency noise characterization of GeOx passivated Germanium MOSFETs

Date

2015
Journal article
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dc.contributor.authorFang, Wen
dc.contributor.authorSimoen, Eddy
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorMitard, Jerome
dc.contributor.authorSioncke, Sonja
dc.contributor.authorMertens, Hans
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLuo, Jun
dc.contributor.authorZhao, Chao
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T19:13:39Z
dc.date.available2021-10-22T19:13:39Z
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25264
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7116554
dc.source.beginpage2078
dc.source.endpage2083
dc.source.issue7
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume62
dc.title

Low frequency noise characterization of GeOx passivated Germanium MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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