Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes

dc.contributor.author	Poyai, A.
dc.contributor.author	Rittaporn, I.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.author	Rooyackers, Rita
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-15T15:36:19Z
dc.date.available	2021-10-15T15:36:19Z
dc.date.issued	2004
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/9462
dc.source.beginpage	372
dc.source.endpage	375
dc.source.journal	Materials Science and Engineering B
dc.source.volume	114-115
dc.title	Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p-n junction diodes
dc.type	Journal article
dspace.entity.type	Publication
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