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Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Date

2008
Journal article
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dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorShimura, Yosuke
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorZaima, Shigeaki
dc.contributor.authorOgawa, Masaki
dc.contributor.authorSakai, Akira
dc.date.accessioned2021-10-17T11:08:53Z
dc.date.available2021-10-17T11:08:53Z
dc.date.issued2008
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14536
dc.identifier.urlhttp://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000092000023231916000001&idtype=cvips&gifs=yes
dc.source.beginpage231916
dc.source.issue23
dc.source.journalApplied Physics Letters
dc.source.volume92
dc.title

Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

dc.typeJournal article
dspace.entity.typePublication
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