Publication:
Theoretical Limit of MOSFET Subthreshold Swing at Sub-Kelvin Temperatures
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0003-3663-0824 | |
| cris.virtualsource.department | 1317d357-5c29-469f-8cef-2166b2d754f2 | |
| cris.virtualsource.orcid | 1317d357-5c29-469f-8cef-2166b2d754f2 | |
| dc.contributor.author | Beckers, Arnout | |
| dc.date.accessioned | 2026-05-04T14:19:27Z | |
| dc.date.available | 2026-05-04T14:19:27Z | |
| dc.date.createdwos | 2025-12-16 | |
| dc.date.issued | 2025 | |
| dc.description.abstract | Fully conductive band tails cause the subthreshold swing to saturate at temperatures above 1 K. However, recent measurements indicate that below 1 K, the subthreshold swing in certain MOSFET structures resumes a linear scaling with temperature. Following this ultra-steep behavior, a new type of plateau has been measured below 1 K. In this letter, we show that hybrid band tails, with both traps and mobile states, explain this new plateau. Furthermore, hybrid band tails explain various non-saturating behaviors above 1 K. Remarkably, for entirely non-conductive band tails, the simulations and theory predict a third type of plateau below 10 mK. We hypothesize that this represents the lower bound of subthreshold swing at sub-Kelvin temperatures, which is a testable prediction from the theory. | |
| dc.description.wosFundingText | This work was supported by the Chips JU Project ARCTIC funded by the Chips Joint Undertaking and its members (including top-up funding by Belgium, Austria, Germany, Estonia, Finland, France, Ireland, The Netherlands and Sweden). ARCTIC gratefully acknowledges the support of the Canadian and the Swiss federal governments under Project 101139908. | |
| dc.identifier.doi | 10.1109/led.2025.3622380 | |
| dc.identifier.eissn | 1558-0563 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/59305 | |
| dc.language.iso | eng | |
| dc.provenance.editstepuser | greet.vanhoof@imec.be | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 2309 | |
| dc.source.endpage | 2312 | |
| dc.source.issue | 12 | |
| dc.source.journal | IEEE ELECTRON DEVICE LETTERS | |
| dc.source.numberofpages | 4 | |
| dc.source.volume | 46 | |
| dc.title | Theoretical Limit of MOSFET Subthreshold Swing at Sub-Kelvin Temperatures | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| imec.internal.crawledAt | 2025-10-22 | |
| imec.internal.source | crawler | |
| imec.internal.wosCreatedAt | 2026-04-07 | |
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