Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Conference contributions
Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current
Publication:
Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current
Copy permalink
Date
2024
Proceedings Paper
https://doi.org/10.1109/IRPS48228.2024.10529341
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Varanasi, Anirudh
;
Degraeve, Robin
;
Roussel, Philippe
;
Vici, Andrea
;
Merckling, Clement
Journal
N/A
Abstract
Description
Metrics
Views
613
since deposited on 2024-08-16
3
last month
1
last week
Acq. date: 2025-12-15
Citations
Metrics
Views
613
since deposited on 2024-08-16
3
last month
1
last week
Acq. date: 2025-12-15
Citations