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Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology
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Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology
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Date
2010
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Griffoni, Alessio
;
Chen, Shih-Hung
;
Thijs, Steven
;
Linten, Dimitri
;
Scholz, Mirko
;
Groeseneken, Guido
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1894
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Acq. date: 2025-12-11
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Views
1894
since deposited on 2021-10-18
1
last month
Acq. date: 2025-12-11
Citations