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Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates

Date

2005
Proceedings Paper
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dc.contributor.authorHuging, Norbert
dc.contributor.authorLuysberg, Martina
dc.contributor.authorUrban, Knut
dc.contributor.authorBuca, Dan
dc.contributor.authorHollander, Bernd
dc.contributor.authorMantl, Siegfried
dc.contributor.authorMorschbacher, Marcio
dc.contributor.authorFichtner, Paulo
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T02:13:29Z
dc.date.available2021-10-16T02:13:29Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10624
dc.source.conferenceNanoelectronic Days 2005
dc.source.conferencedate9/02/2005
dc.source.conferencelocationJulich Germany
dc.title

Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates

dc.typeProceedings paper
dspace.entity.typePublication
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