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Analysis of pocket profile deactivation and its impact on Vth variation for laser annealed device using an atomistic kinetic Monte Carlo approach

Date

2010
Proceedings Paper
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dc.contributor.authorNoda, Taichi
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorVrancken, Christa
dc.contributor.authorOrtolland, Claude
dc.contributor.authorRosseel, Erik
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-18T19:38:02Z
dc.date.available2021-10-18T19:38:02Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17703
dc.source.beginpage383
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage386
dc.title

Analysis of pocket profile deactivation and its impact on Vth variation for laser annealed device using an atomistic kinetic Monte Carlo approach

dc.typeProceedings paper
dspace.entity.typePublication
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