Publication:

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance

Date

2024
Proceedings Paper
https://doi.org/10.1109/IRPS48228.2024.10529409
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dc.contributor.authorHigashi, Yusuke
dc.contributor.authorBastos, Joao
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorBreuil, Laurent
dc.contributor.authorArreghini, Antonio
dc.contributor.authorRamesh, Siva
dc.contributor.authorRachidi, Sana
dc.contributor.authorJeong, Yongbin
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRosmeulen, Maarten
dc.contributor.imecauthorHigashi, Y.
dc.contributor.imecauthorBastos, J. P.
dc.contributor.imecauthorChasin, A.
dc.contributor.imecauthorBreuil, L.
dc.contributor.imecauthorArreghini, A.
dc.contributor.imecauthorRamesh, S.
dc.contributor.imecauthorRachidi, S.
dc.contributor.imecauthorJeong, Y.
dc.contributor.imecauthorVan den Bosch, G.
dc.contributor.imecauthorRosmeulen, M.
dc.date.accessioned2024-08-16T18:28:06Z
dc.date.available2024-08-16T18:28:06Z
dc.date.issued2024
dc.identifier.doi10.1109/IRPS48228.2024.10529409
dc.identifier.eisbn979-8-3503-6976-2
dc.identifier.isbn979-8-3503-6977-9
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44318
dc.publisherIEEE
dc.source.conferenceInternational Reliability Physics Symposium (IRPS)
dc.source.conferencedate2024-04-14
dc.source.conferencelocationGrapevine
dc.source.numberofpages6
dc.subject.keywordsBREAKDOWN
dc.subject.keywordsDEGRADATION
dc.subject.keywordsSILICON
dc.title

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance

dc.typeProceedings paper
dspace.entity.typePublication
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