Publication:

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance

Date

2024
Proceedings Paper
https://doi.org/10.1109/IRPS48228.2024.10529409
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-7493-9681
cris.virtual.orcid0000-0002-9940-0260
cris.virtual.orcid0000-0002-8877-9850
cris.virtual.orcid0000-0003-2869-1651
cris.virtual.orcid0000-0001-6121-0069
cris.virtual.orcid0000-0002-8473-7258
cris.virtual.orcid0000-0002-3663-7439
cris.virtual.orcid0000-0001-9971-6954
cris.virtual.orcid0000-0002-0311-6629
cris.virtual.orcid0000-0001-8581-8597
cris.virtualsource.departmentd910b17c-774d-4036-8b49-51680f68b5e2
cris.virtualsource.department8fc98104-5797-4ad7-ab96-253e6c50458d
cris.virtualsource.department62920b7f-7796-4f0c-9330-257cf5e12846
cris.virtualsource.department5a95d7fb-60a3-41d3-9237-399e069d07d9
cris.virtualsource.department89a91aff-dba9-4deb-bc4c-d5206f2f4e17
cris.virtualsource.department89d5c66e-5be3-4956-bcad-46eec658f3d4
cris.virtualsource.department907474d7-b288-4cda-ae3b-769a18d335fa
cris.virtualsource.departmentce03ac04-c546-4df1-a775-1c68e533233e
cris.virtualsource.department51cca5d2-eea6-479c-8294-59b6a39105d4
cris.virtualsource.departmentb44fc138-a829-48ec-8499-c6a2b6b8eb52
cris.virtualsource.orcidd910b17c-774d-4036-8b49-51680f68b5e2
cris.virtualsource.orcid8fc98104-5797-4ad7-ab96-253e6c50458d
cris.virtualsource.orcid62920b7f-7796-4f0c-9330-257cf5e12846
cris.virtualsource.orcid5a95d7fb-60a3-41d3-9237-399e069d07d9
cris.virtualsource.orcid89a91aff-dba9-4deb-bc4c-d5206f2f4e17
cris.virtualsource.orcid89d5c66e-5be3-4956-bcad-46eec658f3d4
cris.virtualsource.orcid907474d7-b288-4cda-ae3b-769a18d335fa
cris.virtualsource.orcidce03ac04-c546-4df1-a775-1c68e533233e
cris.virtualsource.orcid51cca5d2-eea6-479c-8294-59b6a39105d4
cris.virtualsource.orcidb44fc138-a829-48ec-8499-c6a2b6b8eb52
dc.contributor.authorHigashi, Yusuke
dc.contributor.authorBastos, Joao
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorBreuil, Laurent
dc.contributor.authorArreghini, Antonio
dc.contributor.authorRamesh, Siva
dc.contributor.authorRachidi, Sana
dc.contributor.authorJeong, Yongbin
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRosmeulen, Maarten
dc.contributor.imecauthorHigashi, Y.
dc.contributor.imecauthorBastos, J. P.
dc.contributor.imecauthorChasin, A.
dc.contributor.imecauthorBreuil, L.
dc.contributor.imecauthorArreghini, A.
dc.contributor.imecauthorRamesh, S.
dc.contributor.imecauthorRachidi, S.
dc.contributor.imecauthorJeong, Y.
dc.contributor.imecauthorVan den Bosch, G.
dc.contributor.imecauthorRosmeulen, M.
dc.date.accessioned2024-08-16T18:28:06Z
dc.date.available2024-08-16T18:28:06Z
dc.date.issued2024
dc.identifier.doi10.1109/IRPS48228.2024.10529409
dc.identifier.eisbn979-8-3503-6976-2
dc.identifier.isbn979-8-3503-6977-9
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44318
dc.publisherIEEE
dc.source.conferenceInternational Reliability Physics Symposium (IRPS)
dc.source.conferencedate2024-04-14
dc.source.conferencelocationGrapevine
dc.source.numberofpages6
dc.subject.keywordsBREAKDOWN
dc.subject.keywordsDEGRADATION
dc.subject.keywordsSILICON
dc.title

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance

dc.typeProceedings paper
dspace.entity.typePublication
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