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Model for defect generation at the (100) Si/SiO2 interface during electron injection in MOS structures
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Model for defect generation at the (100) Si/SiO2 interface during electron injection in MOS structures
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Date
2003
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Houssa, Michel
;
Autran, J.L.
;
Heyns, Marc
;
Stesmans, Andre
Journal
Applied Surface Science
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1879
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Acq. date: 2026-01-06
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Metrics
Views
1879
since deposited on 2021-10-15
3
last month
Acq. date: 2026-01-06
Citations