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Dopants for N and P junctions in germanium

Date

2005
Proceedings Paper
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dc.contributor.authorSatta, Alessandra
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMeuris, Marc
dc.contributor.authorJanssens, Tom
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorHoflijk, Ilse
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorHoflijk, Ilse
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-16T04:51:44Z
dc.date.available2021-10-16T04:51:44Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11168
dc.source.beginpage468
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate16/05/2005
dc.source.conferencelocationQuebec Canada
dc.source.endpage475
dc.title

Dopants for N and P junctions in germanium

dc.typeProceedings paper
dspace.entity.typePublication
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