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New carbon-based thermal stability improvement technique for NiPtSi used in CMOS technology

Date

2010
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dc.contributor.authorOrtolland, Claude
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorRosseel, Erik
dc.contributor.authorMertens, Sofie
dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorLauwers, Anne
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.date.accessioned2021-10-18T19:55:52Z
dc.date.available2021-10-18T19:55:52Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17748
dc.source.conferenceMaterials for Advanced Metallization Conference
dc.source.conferencedate7/03/2010
dc.source.conferencelocationMechelen Belgium
dc.title

New carbon-based thermal stability improvement technique for NiPtSi used in CMOS technology

dc.typeOral presentation
dspace.entity.typePublication
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