Publication:

Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE

Date

2008
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorCheng, Kai
dc.contributor.authorMotsnyi, Vasyl
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorSijmus, Bram
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMotsnyi, Vasyl
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMotsnyi, Vasyl::0000-0001-5297-9298
dc.date.accessioned2021-10-17T06:30:29Z
dc.date.available2021-10-17T06:30:29Z
dc.date.issued2008
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13509
dc.source.beginpage1624
dc.source.endpage1626
dc.source.issue6
dc.source.journalPhysica Status Solidi C
dc.source.volume5
dc.title

Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles