Publication:

Impact of ALD TiN capping layer on interface trap and channel hot carrier reliability of HKMG nMOSFETs

Date

2018
Journal article
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dc.contributor.authorYang, Hong
dc.contributor.authorLuo, Weichun
dc.contributor.authorZhou, Longda
dc.contributor.authorXu, Hao
dc.contributor.authorTang, Bo
dc.contributor.authorSimoen, Eddy
dc.contributor.authorYin, Huaxiang
dc.contributor.authorZhu, Huilong
dc.contributor.authorZhao, Chao
dc.contributor.authorWang, Wenwu
dc.contributor.authorYe, Tianchun
dc.contributor.imecauthorXu, Hao
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-26T10:06:11Z
dc.date.available2021-10-26T10:06:11Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32323
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8386832
dc.source.beginpage1129
dc.source.endpage1132
dc.source.issue8
dc.source.journalIEEE Electron Device Letters
dc.source.volume39
dc.title

Impact of ALD TiN capping layer on interface trap and channel hot carrier reliability of HKMG nMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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